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Product Sub-group : MOSFETs
Power MOSFET
uses «super junction" to reduce power drain
01/05/2005
Reference: 13528

Toshiba's DTMOS employs a new super junction structure that enables a reduction in power consumption caused by RDSON to 40% of the value typically achieved with conventional MOSFETs. The first device in the family, the TK15A60S, is targeted for use in power supplies of television sets, home appliances, AC adapters and ballast lighting. The super junction structure, which has vertical paths to allow electrical current to flow through easily on a silicon substrate, realises lower on-resistance than the theoretical limit of silicon. By applying this structure, the resistance for the same area in DTMOS device achieves a 60% reduction, and its gate charge achieves a 40% decrease compared to normal MOSFETs.


Toshiba Electronics Europe GmbH

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tel: +49 211 5296 0
fax: +49 211 5296 400

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