The IRF6619 and IRF6633 chip set has been designed for high-frequency, high-current DC/DC converters used to power advanced telecom and datacom systems as well as Intel and AMD processors. It replaces four standard D-Pak MOSFETs per phase in processor power systems, cutting component count in half and reducing MOSFET board space by over 50% per phase, claims manufacturer IR. For example, in 130A, five-phase converters, the chip set delivers 85% efficiency. A synchronous MOSFET, the IRF6619 has a very low typical device on-resistance of 1.65mOhm at 10VGS and 2.2mOhm at 4.5VGS, with a reverse recovery charge of 22nC. It is housed in the MX medium can DirectFET package, occupying the same board area as an SO-8, but with a 0.7mm profile. The IRF6633 is best-suited for use as a control FET, with very low gate charge and Miller charge of only 4nC. It has more than 43% reduction in on-resistance times gate charge compared to other 20VN devices on the market, and is housed in the MP medium can DirectFET package, with a 0.7mm profile.
