Built on a 90nm process, the quad data rate II+ (QDR II+) and double data rate II+ (DDRII+) SRAM devices enable up to 50% more system-level bandwidth than their predecessor QDRII and DDRII. The devices accelerate read/write capabilities in a variety of data-intensive applications, including switches, routers, servers, storage appliances, wireless basestations and test equipment. Operating at speeds up to 500 MHz, the QDRII+ and DDRII+ have a throughput of up to 72Gbit/s, while using the same footprints as the previous parts and a 165-pin, FBGA package. The devices are supported by the QDR consortium and will be pincompatible with products from the other consortium members.