Hitachi Europe' Power Devices Division has introduced two high voltage IGBT modules. The new 3.3KV MBN1000E33E2 and MBN1500E33E2 IGBT modules offer a current rating of 1000A and 1500A respectively. The new modules are manufactured using Hitachi's E2 series fine pattern silicon process technology which enables a more cost effective production process, increased current capability and an increase in the active silicon cell area. Both the existing E series and the new E2 series products have similar turn-on and turn-off characteristics using a planar gate. This allows the same gate driver unit from existing designs to be used in new higher specification E2 series designs.
The MBN1000E33E2 is available in a small footprint package and the MBN1500E33E2 is available in a large footprint package. Typical applications for the new IGBT modules include propulsion and auxiliary power systems, renewable energy, power conditioning and heavy industrial systems.
