White Electronic Designs has introduced DDR3 SDRAM to its portfolio with two 512Mbyte devices. The W3J128M32G-XNBX and W3J2128M16G-XNBX are available organised as 128Mbytex32 and 2x128Mbytex16 respectively. Both are packaged in a 13x15mm, 140 plastic ball grid array with an operating voltage of 1.5V. The package is suitable for use in extended environment embedded applications such as aircraft, secure communications and munitions. The memory offers higher board density and routing advantages, compared with similar CSP (chip scale packaging) alternatives, says the company. It is claimed to offer 47% PCB space savings and a 55% reduction in I/O count. The use of lead-based metallurgy in the ball grid array balls provides the second level reliability demanded by military applications. Closely spaced die in the package result in reduced trace lengths, providing lower parasitic capacitance. The memories are high-speed CMOS, DRAM (dynamic random access memories) with pipelined, multi-bank architecture that allows for concurrent operation and provides high, effective bandwidth. Data transfer rates are 800 and 1,066Mbit/s in commercial, industrial and military temperature ranges.
