Black Sand Technologies has announced that it has produced the world's first 3G CMOS RF power amplifier. Mobile phones and wireless products today use power amplifiers based on GaAs (gallium-arsenide) semiconductor technology. Replacing GaAs with CMOS silicon technology improves manufacturing yield, performance, cost, battery life and call quality, claims the company. However, CMOS does not lend itself easily to use in power amplifiers. The company's proprietary linear CMOS PA architecture enables integrated digital control circuits to improve performance, battery life, and reliability for mobile devices.