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Fairchild has developed an integrated P-channel PowerTrench MOSFET and Schottky diode as a single-package solution to meet critical efficiency and thermal needs in battery-charging and power-multiplexing applications. The FDFMA2P859T, available in a MicroFET thin package, offers improved power dissipation and conduction-loss characteristics. With a 0.55mm package height, this device is suitable for low-profile designs, such as those common in the latest portable and wearable medical devices, cell phones and media players. The device offers high thermal performance and ensures a reverse leakage current of 1µA at Vr=10V for the Schottky diode. The device meets the efficiency, space and thermal needs of advanced designs.