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Product Sub-group : Flash Memory
30nm MLC NAND memory achieves double data rate transmission
20/01/2010
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Samsung Electronics has introduced 30nm (nanometer) class, 32Gbit, MLC (multi-level-cell) NAND memory with an asynchronous DDR (double data rate) interface.

DDR NAND can raise the read performance of mobile devices requiring high-speeds and large amounts of storage space. The new DDR MLC NAND chip, which reads at 133Mbit/s would replace SDR (single data rate) which has an overall read performance of 40Mbit/s.

With the new MLC, double data rate transmission can be achieved without increasing power consumption, giving designers a more latitude in introducing diverse CE devices.

The MLC can be used in SSDs for PCs, premium SD memory cards for smartphones, and in the company's moviNAND memory. The high-density, high-performance memory is a suitable solution for PMPs (personal media players), MP3 players and CNS (car navigation systems).


Samsung Electronics Co. Ltd

19th Fl, Joongang Ilbo Bldg
7 Soonhwa-Dong, Chung-Ku
 Seoul - Korea Dem.People's Rep. -
tel: +82-(02)7507720
fax: +82-(02)7507155

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