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Product Sub-group : Flash Memory
Multi-Level-Cell NAND Chips
use 30nm process to produce 8Gbyte microSD cards
05/01/2010
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Samsung has developed 3bit, MLC (multi-level-cell) NAND flash chips using 30nm-process technology. The chips will be used in NAND-flash modules with the company's 3bit NAND controllers to produce 8Gbyte micro SD (secure digital) cards. The cost-efficient technology, says the company, will open NAND to more diverse market applications and support the development of more cost-competitive, high-density consumer-electronics storage solutions. The company says that 3bit MLC NAND increases the efficiency of NAND data storage by 50% over today's pervasive 2bit MLC NAND chips. The resulting NAND-based storage can be applied to USB flash drives in addition to a range of micro SD cards. Increased video usage is expected to drive demand for 30nm, 3bit NAND flash at 32Gbytes and above.


Samsung Electronics Co. Ltd

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