NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage power MOSFET devices with low on-state resistance RDS(on) and low-gate charge QG. Based on the company's SuperJunction1 technology, the devices feature a high FOM (figure of merit) and minimise switching losses and increase system efficiency.
Compared with the company's own UMOS-4 trench technology, the SuperJunction1 technology reduces the gate charge and the input capacity by over 40% while maintaining the low on-resistance RDS(on).
The new NP180N04TUJ and NP180N055TUJ power MOSFETs feature an advanced architecture and an advanced package designed to manage heat dissipation and reduce power loss with low markets RDS (on) max levels, 1.5mΩ and 2.3mΩ, respectively. Operating at 40V or 55V voltage drain source VDS and ID = 180A, the devices are suitable for high performance application such as the EPS (electric power steering) or ISG (integrated starter generators) that require high current capability.
The ISG offers starter and generator functions with one electrical machine, and is suitable for implementing features such as start/stop, boost functions or recuperative braking. Currently, eight devices are available with SuperJunction1 process technology, achieved by a fine design rule of 0.35µm. The devices are qualified to AEC-Q101, support up to 175°C channel temperature and are lead-free with tin-plated leads.
