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Product Sub-group : MOSFETs
Low-Voltage Power MOSFETs
feature SuperJunction1 technology
01/02/2010
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Reference: 39559

NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage Power MOSFET devices that feature a low on-state resistance and a low gate charge. Based on the company's SuperJunction1 technology, the products feature a high figure of merit, minimise switching losses and increase system efficiency. The NP180N04TUJ and NP180N055TUJ feature an advanced architecture and an advanced package designed to manage heat dissipation and reduce power loss. Operating at 40 or 55VDS and 180A ID, the devices meet the demands of high-performance application such as electric power steering or ISG (integrated starter generators) that require high current capability. The ISG offers starter and generator functions with one electrical machine and can be used to implement additional features such as start/stop, boost functions or recuperative braking.


Renesas Electronics Europe GmbH

Arcadiastrasse 10
40472 Düsseldorf - Germany -
tel: +49 211 6503 1469
fax: +49 211 650 31344

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May 2012