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Product Sub-group : Flash Memory
Multi-Level Cell Solid State Devices
are based on NAND flash memories for mini notebooks and entertainment
06/04/2010
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Reference: 40503

Toshiba has expanded its NAND-flash-based SSDs (solid state drives) based on the company's 32nm multi-level cell NAND flash memories. There are two versions: the SG SSD modules, the company claims, include the industry's first 128Gbyte half-slim or mSATA modules, which are suitable for applications such as mini-mobile and netbook PCs. The HG modules delivers high performance and endurance for notebook computers and for gaming and home entertainment systems. The SG series models have a maximum sequential read speed of 180Mbyte/s and a maximum sequential write speed of 70Mbyte/s. The 128Gbyte modules are one seventh the volume and one eighth the weight of a standard 2.5inch form factor SSDs, and consume a fraction of the power, says the company. The third-generation HG high performance SSDs have an advanced MLC controller that supports higher read speeds, parallel data transfers and wear leveling to increase reliability and endurance. The drives achieve improved system responsiveness with a maximum sequential read speed of 250Mbyte/s and maximum sequential write speed of 180Mbyte/s. The memories are offered in a choice of 64, 128, 256 and 512Gbyte capacities in a standard 9.5mm case and in a 7mm thin case in 128 and 256Gbyte capacities. Smaller 1.8inch drives are available in 64, 128 and 256Gbyte capacities and these versions are also offered in a caseless design or an LIF-module. The drives also provide AES data encryption to support data access only when authorised. Both versions support the Trim command implemented in Windows 7 which allows the OS to tell the SD controller that data can be deleted to free blocks for use.


Toshiba Electronics Europe

First Floor , Delta House
The Crescent, Southwood Business Park
GU14 0NL Farnborough - United Kingdom -Hampshire
tel: +44-870 060 2370
fax: +44-1525 530 250

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