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Product Sub-group : MOSFETs
Integrated Single Die DIOFET
improves efficiency of PoL converter
13/09/2010
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Reference: 42040

Products from Diodes' DIOFET process monolithically integrate a power MOSFET and an anti-parallel Schottky diode into a single die. Used in the low-side MOSFET position of synchronous buck point-of-load  converters, the DMS3014SSS and DMS3015SSS improve the efficiency and reduce the operating temperature of fast switching point of load converters in high-volume computing, telecomms and industrial applications. With typical RDS (ON) ratings of 10 and 8.5mΩ respectively at VGS of 10V, these devices minimise the conduction losses associated with low-side MOSFETs. The forward voltage of the DIOFET's integrated Schottky diode is 25% less than that for comparable MOSFET/Schottky diodes and 48% less than that of the intrinsic body diode of a MOSFET. This minimises switching losses and improves efficiency. The low QRR of DIOFET's integrated Schottky and its soft reverse recovery characteristics further contribute towards minimising body diode switching losses. The DIOFETs operate at low temperature. As every 10oC reduction in MOSFET junction temperature doubles lifetime reliability, the low operating temperature of the DIOFETs increases the reliability of the  converter. Electronica: Hall A5: stand 159


Diodes Inc.

3050 E. Hillcrest Drive
91311 Westlake Village - USA -California
tel: +1-(818)8824920
fax: +1-(818)3411736

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June 2012