The BLF888A UHF (ultra high frequency) RF power transistor from NXP Semiconductors is a 600W LDMOS device for broadcast transmitters and industrial applications. For a DVB-T signal over the full UHF band from 470 to 860MHz, the company claims that the transistor can deliver 120W average power with efficiencies greater than 31%. Featuring high linearity, a gain of 21dB and ruggedness corresponding to VSWR greater than 40:1, the transistor is suitable for advanced digital transmitter applications, such as DVB-T. The company claims that its 50V high-voltage LDMOS process technology and advanced thermal concepts result in a power density and thermal resistance of 0.15k/W. It allows broadcast equipment manufacturers to optimise existing or new transmitter installations. The transistor is available in two versions. The BLF888A is supplied in a bolt-down package and the BLF888AS is supplied in an earless package, which enables a more compact PCB design. The BLF888AS can be soldered to achieve a further decrease in junction temperature.
