AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors are available in 1.8mm gullwing and reverse gullwing surface-mount packages from Vishay Intertechnology. The photo detectors are sensitive to visible and near-infrared radiation and measure 2.3x2.3x2.8mm. They are optimised for light curtains, miniature switches, encoders, and photo-interrupters in metering and automotive applications; and detectors for visible and infra red emitter sources in proximity applications. The photodiodes offer a 12µA light current and spectral sensitivity range of 350 to 1120nm, while the phototransistors offer a light current of 6mA and spectral sensitivity range of 470 to 1090nm. The VEMD25x0X01 and VEMT25x0X01 devices feature a 1nA dark current, ±15° angle of half sensitivity, and temperature range of -40 to +100°C, and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01. Most photo detectors have an MSL (moisture sensitivity level) of three and must be mounted within 72 hours of being unsealed, these devices can remain on the plant floor for up to four weeks, due to an MSL of 2a/ J-STD-020.
