MicroGaN and Diotec Semiconductor (Hall A5 - 232) have developed a 4A, 600V SiGaN Schottky diode, with a low barrier of 0.3V. It has a negligible reverse recovery and only a very low switching time, caused by junction capacity. The stored charge is comparable to that of silicon carbide (SiC) devices, while the forward voltage drop at 4A and 25°C is typically 1.2V, and typically 1.6V at 100°C. The diodes are suited for high frequent switching circuits, such as power factor correction and inverter circuits. They boost power factor correction efficiency especially in partial load condition. Power losses in drive and solar inverters can be significantly reduced, claim the companies,just by bypassing the body diodes of Si-Superjunction MOSFETs.
