An IC and an IGBT from International Rectifier are for the automotive applications. The AUIRS2191S 600V driver IC and AUIRGP50B60PD1 600V NPT (non-punch-through) IGBT (insulated gate bipolar transistor) have fast switching speed and high power density suitable for high frequency DC/DC applications including high power DC/DC SMPS converters used in electric and hybrid electric vehicles. The AUIRS2191S IC enables independent control of the high- and low-side in a half-bridge topology. The device provides up to ±3.5A (source/sink) current capability with a propagation delay times of just 90ns (typical). The IC also features independent control of the high- and low-side to allow customisation of dead time to minimise power loss and matched propagation delay on both channels. Operating junction temperature is up to 150°C. Safety features are under-voltage lockout for both channels and Vss logic ground offset pin separated from COM power ground pin to provide higher immunity to transient shifts on COM voltage. The IC has proprietary high-voltage integrated circuit and latch-immune CMOS technologies to offer ruggedised monolithic construction. The output drivers offer a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, operating up to 600V. There is also negative voltage spike immunity for reliable operation even under extreme switching conditions and short circuit events. The AUIRGP50B60PD1 600V IGBT is co-packaged with an enhanced 25A diode capable of operating at switching speeds up to 150kHz, making it a substitute for MOSFETs in high power SMPS applications. The automotive-qualified IGBT has egligible turn-off tail current and low turn-off switching loss to help bring about higher operating frequencies. The improvements in switching performance, combined with positive thermal coefficient characteristics and the lower gate turn-on charge, enable higher current density.
