Renesas Electronics has announced the availability of its low-noise hetero-junction FET (field effect transistor) product, the NE3520S03, featuring low noise characteristics for satellite broadcast reception applications. The FET features a semiconductor chip with an epitaxial structure that speeds up the electron velocity and reduces the source resistance. Additionally, a 3D electromagnetic field improves the product performance at high frequencies in the gigahertz class, while a hollow plastic package allows easy replacement of the company's earlier product. The device exhibits a noise figure (NF) value of 0.65dB, which is 0.05dB lower than the existing product. The product improves the reception sensitivity of satellite antennas with high-definition (HD) TV broadcasts. They help to amplify weak microwave signals transmitted by satellites. A single LNB employs from 3 to 20 low-noise, and a low noise figure provides stable reception and clarity of picture.
