SemiSouth Laboratories has announced a reference design and applications note for a gate driver optimised for high speed, hard switching of the company's normally-off SiC vertical JFETs. The design enables fast turn-on and turn-off in Isolated Bridge topologies and provides a peak output current of +6/- 3A for turn-on transients yielding record low switching energy losses.
Suitable for driving the company's 63/50mΩ SJEP120R063 or SJEP120R050 JFETs, the demo board SGDR600P1 is a two-stage driver-switching and conduction featuring a switching frequency of up to 250kHz. The device has a duty cycle from 0 to 100%.