Vishay Intertechnology has released two 100V n-channel TrenchFET power MOSFETs with on-resistance ratings down to 4.5VVGS in SO-8 and PowerPAK SO-8 packages. The SiR870DP and Si4190DY utilise the ThunderFET technology. The SiR870DP features an on-resistance of 7.8mΩ at 4.5V and 6mΩ at 10V. For designers, its low on-resistance translates into low conduction losses and reduced power consumption for energy-saving green solutions. With its 208mΩ-nC FOM at 4.5V, it combines low conduction and switching losses for high frequency and switching applications. For designers requiring an SO-8 packaged device, the Si4190DY features an on-resistance of 8.8mΩ at 10V and 12mΩ at 4.5V, in addition to its FOM of 340mΩ-nC at 10V and 220mΩ-nC at 4.5V. The devices are optimised for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The low on-resistance allows a wide range of PWM and gate driver ICs to be considered. By utilising 5V rated ICs, gate driver losses can be reduced and the overall design simplified by eliminating the need for a separate 12V power rail.
