Samsung has started production of 4Gbit, low power DDR2 (LPDDR2) DRAM using 30nm class technology. The mobile DRAM chip will deliver lighter mobile devices, with longer battery life, says the company. Compared to its previous 40nm class 2Gbit LPDDR2 DRAM, the 30nm class 4Gbit LPDDR2 DRAM increases productivity by 60%. The memory also delivers a data transmission speed of 1,066Mbit/s, which is more than double that of today's MDDR, which operates between 333 to 400Mbit/s. When creating a 1Gbyte LPDDR2 package previously, four chips had to be stacked. With this 4Gbit LPDDR2, stacking two chips will achieve the same density, and a package height reduction from 1- to 0.8mm. It also consumes 25% less power. The 4Gbit 1Gbyte packages are available now and will be joined by the 2Gbyte (16Gbit) packages consisting of four 4Gbit devices.