Designed for high speed reading and writing, OKI Semiconductor's FeRAM, or ferroelectric RAM is a non-volatile memory which uses a ferroelectric film as a capacitor for data storage. Compared to other non-volatile memory, such as EEPROM and flash, it has a lower power consumption, 1:400 or less, claims the company, which is part of the Rohm Group. It is also claimed to have a high-speed writing (similar to DRAM) and 1012 times higher writing cycles. Data retention is 10 years, making it suitable for where a reliable storage of data is mandatory such as accounting, configuration and status information in consumer, industrial and car multimedia applications. There are four versions, 32kbit with SPI IF, a 64kbit with I²C IF and 256kbit with SPI IF, all in SOP8 packages. The fourth is a 256kbit model with parallel IF, in a TSOP28 package. The 8bit configuration operates from 3.3V at -40 to +85°C.
