Vishay Intertechnology has introduced 40 and 60V N-channel TrenchFET power MOSFETs with low on-resistance. The 60V SiR662DP MOSFET offers an on-resistance of 2.7mΩ at 10V and 3.5mΩ at 4.5V and an FOM (figure of merit) of 172.8mΩ-nC at 10V and 105mΩ-nC at 4.5V. The 40V SiR640DP offers an on-resistance of 1.7mΩ at 10V and 2.2mΩ at 4.5V and an FOM of 128mΩ-nC at 10V and 76mΩ-nC at 4.5V.
The devices are built on a silicon technology by utilising an optimised trench density and a unique gate structure.
According to the company, the low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and standby mode. The MOSFETs are suitable for secondary-side synchronous rectification in DC/DC and AC/DC converters, primary-side switching in DC/DC converters, POL modules, motor drives, bridge inverters, and mechanical relay replacement applications.
They are suitable for end products such as telecom power supplies, industrial automation and professional gaming systems, UPS, and consumer applications. The MOSFETs' 4.5V rating lowers gate drive losses and allows the use of 5V PWM ICs. Both the devices are halogen-free according to the IEC 61249-2-21 definition and are compliant to RoHS Directive 2002/95/EC.