Fairchild Semiconductor has released an N-channel, PowerTrench MOSFET to minimise conduction loss, switch node ringing, and to enhance the overall efficiency of DC/DC converters. Using a silicon combination, the FDMS86500L MOSFET provides RDS(ON) of 2.5mΩ at a VGS of 10V. The company claims that the MOSFET enables low conduction losses in a 5x6mm power 56 package.
The MOSFET uses shielded-gate MOSFET technology, to provide low switching losses. It offers good figure of merit, and delivers high efficiency and low power dissipation to meet efficiency standards. The RoHS-compliant MOSFET also includes a body diode technology for soft recovery purposes.