Logo
Get direct access via EPNdirect to Europe’s most comprehensive database of electronic products & suppliers
Search    Advanced Search Criteria

TOP PRODUCTS

Print | PDF | Digg This | Slashdot It! | Add to Del.icio.us |
Product Sub-group : MOSFETs
N-channel MOSFET minimises conduction loss and switch node ringing
10/06/2011
Report dead link
Reference: 45014

Fairchild Semiconductor has released an N-channel, PowerTrench MOSFET to minimise conduction loss, switch node ringing, and to enhance the overall efficiency of DC/DC converters. Using a silicon combination, the FDMS86500L MOSFET provides RDS(ON) of 2.5mΩ at a VGS of 10V. The company claims that the MOSFET enables low conduction losses in a 5x6mm power 56 package.

 

The MOSFET uses shielded-gate MOSFET technology, to provide low switching losses. It offers good figure of merit, and delivers high efficiency and low power dissipation to meet efficiency standards. The RoHS-compliant MOSFET also includes a body diode technology for soft recovery purposes.


Fairchild Semiconductor

1322 Crossman Avenue
Mail Stop M-100
94089 Sunnyvale - USA -California
tel: +1(408)8222314
fax: +1(408)8222302
back to top
Search in the archives
Advanced Search Criteria
Magazine_mai_2012_small
Loupe
issue
May 2012