Toshiba Electronics Europe has introduced a low voltage MOSFET that is suitable for power management in portable, battery-powered applications. The SSM3K333R MOSFET utilises the company's seventh generation n-channel process technology and is optimised for standard voltage switching requirements. It exhibits maximum on resistance values of 42 and 28mΩ with switching voltages of 4.5 and 10V, respectively. The low resistance values of the MOSFET enable low loss operation for battery-operated equipment. The MOSFET is specified for a drain-source voltage of 30V, making it compatible with many industrial power management applications. The MOSFET is available in a SOT-23F that offers low thermal resistance. This provides a maximum DC current rating of 6A and a drain power dissipation capability of 1W from a 2.9x2.4mm package.
