Diodes Incorporated has released a portfolio of MOSFETs in an ultra-miniature DFN1006-3 package. The MOSFETs cccupy 0.6mm2 of PCB area and supports a power dissipation of up to 1.3W under continuous conditions. They have an off-board height of 0.4mm and are suitable for thin profile portable consumer electronics, including tablet PCs and smart phones. The company is offering the MOSFETs with breakdown voltage ratings of 20, 30, and 60V for use in high reliability load switching, signal switching and boost conversion applications.
The 20V rated DMN2300UFB4 N-channel MOSFET delivers an Rds(on) performance of 150mΩ, and reduces conduction losses and power dissipation. The MOSFET has an electrostatic discharge rating of 2kV.