Toshiba Electronics Europe has introduced a range of rugged automotive power MOSFETs that combine the company's trench MOS process with the DPAK+ package technology. The company claims that the MOSFETs reduce PCB real estate and noise in switching regulators, DC/DC converters and motor drives. The MOSFET line-up comprises 11 N-channel devices that offer a choice of maximum voltage ratings of 40, 60 and 100V. The 10 P-channel parts also feature maximum voltage ratings between -40 and -60V. The MOSFETs, having a current rating from ±8 to ±80A, operate in automotive environments with channel temperatures of up to 175ºC. Based on the company's WARP technology, the DPAK+ package replaces conventional internal aluminium bondwires between the MOSFET die and the package leads with wide copper clamps. The clamping mechanism withstands repeated power cycling as well as exposure to shock and vibration. In addition, the package's cross-sectional area, combined with high electrical connectivity, minimises I2R heating due to package losses and reduces package inductance. This leads to swift device operation, low noise, and reduction in heat. The MOSFETs have low leakage currents and ultra-low on resistances of 2.4mΩ. They have a resistance between channel and case of 1.5°/W and a power dissipation of 100W at 25ºC.
