The FDMS36xxS from Fairchild Semiconductor incorporates a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected so that synchronous buck converters can be placed and routed. The control MOSFET and synchronous MOSFET (SyncFET) are designed for output currents up to 30A. The devices are integrated into a single module, replacing two or more 5x6mm PQFN, S08 and DPAK packages. The MOSFETs use the company's charge-balanced Shielded Gate technology and packaging technology to achieve what it claims is an industry-leading RDS (ON) of less than 2mΩ at high performance computing rated breakdown voltages. Currently the FDMS3602S and FDMS3604AS PowerTrench power stage asymmetric dual N-channel MOSFETs minimise conduction and switching losses from 300 to 600kHz. Additional devices will be added based on customer demands.
