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Pulse transformers couple gate-drive circuits to MOSFETs and IGBTs
13/09/2011
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Reference: 45782

TDK-EPC has developed a series of EPCOS EP5 SMT pulse transformers. The pulse transformers are used to couple gate-drive circuits to MOSFETs and IGBTs (insulated-gate bipolar transistors) operating at switching frequencies over 150kHz. These transformers are available with a wide range of turns ratios, polarities, and outputs and have dimensions of 8.1x6.7x5.4mm³.

 

Parasitic capacitances between windings are 25 to 95pF. Stray inductances range between 0.9 and 2.5µH. Short-term dielectric strength is tested to 1500V DC for all types of the B82804A series. These components are designed for ambient temperatures of up to 85°C and operating temperatures of up to 125°C.

The main applications of these transformers are half- and full-bridge converters as well as in frequency converters or inverters.

The B82804A0304A225 has an inductance of 300µH and stray inductance of 0.9µH, provides two outputs with turns ratio of 2.5:1:1. The B82804A0324A220 has 317µH inductance and 0.6µH stray inductance, provides two outputs with 2:1:1 turns ratio. The B82804A0264A210 has 264µH inductance and 0.3µH stray inductance, provides two outputs with 1:1:1 turns ratio. The B82804A0354A110 has 350µH inductance and stray inductance of 1µH, provides one output with 1:1 turns ratio. The B82804A0694A115 has 690µH inductance and stray inductance of 2.5µH, provides one output with 1.5:1 turns ratio. The B82804A0474A125 has 473µH inductance and stray inductance of 1.5µH, provides one output with 2.5:1 turns ratio.


TDK Corp.

1-13-1 Nihonbashi
Chuo-ku
103-8272 Tokyo - Japan -
tel: +81-(03)32785118
fax: +81-(03)52017243

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May 2012