Samsung Electronics has announced the development of 32Gbyte DDR3 RDIMMs (registered dual inline memory modules) that use 3D TSV (through-silicon via) package technology. The package technology is based on the company's 30nm-class 4Gbit DDR3. The technology can transmit at speeds of up to 1333Mbit/s, a 70% gain over preceding quad-rank RDIMMs with operational speeds of 800Mbit/s, according to the company. The latest module from the company consumes 4.5W/h. Compared to the 30nm-class 32Gyte LRDIMM (load-reduced, dual-inline memory module), which offers advantages in constructing 32Gbyte or high memory solutions, the RDIMM module provides approximately 30% additional energy savings, claims the company. These savings are directly attributable to the adoption of TSV technology, which is claimed to enable a multi-stacked chip to function at levels comparable to a single silicon chip.
