Vishay Intertechnology has introduced an 8V p-channel TrenchFET (field-effect transistor) power MOSFET. The SiB437EDKT offers an on-resistance rating down to 1.2V. The MOSFET is suitable for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks, and tablet PCs.
The MOSFET's on-resistance ratings of 1.5 and 1.2V allow the MOSFET to work with the gate drives and bus voltages. The MOSFET offers an on-resistance of 34mΩ at 4.5V, 63mΩ at 1.8V, 84mΩ at 1.5V, and 180mΩ at 1.2V. The p-channel MOSFET in the 1.6x1.6mm footprint area with a sub-0.8mm profile features on-resistance of 37mΩ at 4.5V, 65mΩ at 1.8V, and 100mΩ at 1.5V. These values are 8, 5, and 16% high, respectively, than the MOSFET, claims the company.
100% Rg tested, the MOSFET is halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The MOSFET offers ESD protection of 2000V.
