CMOSIS has introduced its image sensor CHR70M, which offers an image area of 10,000x7,096 active pinned photodiode pixels having a pixel pitch of 3.1µm2, in a two-pixel sharing pattern. The sensor provides a frame rate of 3fps at full resolution. Application areas include industrial imaging, such as flat-panel and PCB inspection, document scanning and aerial photography.
Image datas are transferred through eight analogue outputs, each running at the full master clock rate of 30MHz. High frame rates can be achieved in windowing or sub-sampling modes. The CMOS image sensor also integrates a programmable gain amplifier, offset regulation, as well as on-chip timing generation. During the design of the sensor special precautions have been taken to assure that the two pixels with shared readout behave very similarly in terms of offset and gain, to avoid checkerboard-like artefacts and the need for off-chip calibration, claims the company. Due to the staggered layout of the pixel readout circuitry all pixels show similar modulation transfer function behaviour and angular sensitivity.
The sensor also provides moving-window functionality. The windowing and other settings are programmable via the built-in SPI interface. All internal exposure and read-out timing values can be generated by a programmable on-board sequencer. External triggering and exposure programming is also possible. The sensor works with 3.3V signalling levels. It is available in a 65pin ceramic PGA. The sensor is available as a B/W with and without micro lenses, as well as a bayer RGB colour version with microlenses. All versions are available with glass cover with two-sided anti-reflective coating.
The sensor features a full-well charge of greater than 13ke-. It provides 0.18A/W at 555nm sensitivity and 7e- dark noise when measured in high-gain mode. The sensor features a conversion factor of 60µV/e and has 63dB dynamic range. It provides 3.2e-/s dark current at room temperature and 0.09% of fixed pattern noise. The sensor also features a power consumption of 360mW.
