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A group of semiconductor companies have developed a roadmap for leveraging CMOS designs intended for manufacturing on bulk silicon to fabricate ICs on fully depleted silicon-on-insulator (FD-SOI) substrates with ultra-thin buried oxide layers. The white paper is entitled Considerations for Bulk CMOS to FD-SOI Design Porting. The result, according to the SOI Industry Consortium is chips with improved performance and lower operating power. The companies involved in this collaborative research effort include ARM, Leti, Université Catholique de Louvain (UCL), IBM, GlobalFoundries and Soitec.