Microsemi has announced a DDR3 SDRAM memory device and is available as a compact x64 and x72 unregistered dual in-line memory module or small outline dual in-line memory module. The memory module provides up to 4Gbyte compact memory densities that support high-performance processors and chipsets in mission-critical applications such as avionics, unmanned aerial vehicles, missile systems and defence applications.
The company's commercial off-the-shelf memory device provides a standalone, high-density memory solution to meet the data widths necessary for many applications. The memory module significantly reduces space requirements as compared to systems built from discrete memory components, and also uses less board space than memory solutions using chip scale packages and single-die solutions, claims the company.
The memory module measures 23x32mm, on 1mm pitch and is available
in a 543 plastic ball grid array package, with SnPb balls. The memory module supports data rates of 800, 1,066 and 1,333Mbit/s and operates on a 1.5V power supply. It uses less power at the same data rate when compared to a DDR2 device and also available in commercial and industrial temperature ranges.
The memory module is footprint compatible with the company's 1 and 2Gbyte memory devices. It is designed for DDR3 fly-by routing and includes address, command and clock terminations. The memory module also includes RZQ calibration resistors and is built in decoupling.
The company's high-speed memories optimise performance by using a 4ns-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The memory modules can be ruggedised and processed for tamper resistance, and are available in densities up to 4Gbyte in both 512Mx72 and 512Mx64 configurations.
