Toshiba Electronics Europe has expanded its family of compact, monolithically integrated IGBTs with the GT40QR21. This high-speed switching device is suitable for cooking appliances and induction heating applications. The 15.5x20x4.5mm, 1200V N-channel, ‘enhancement mode' IGBT has a reverse recovery freewheeling diode for voltage resonance inverter switching. The bipolar transistor operates at temperatures of up to 175ºC with maximum current ratings of 40A at 25ºC and 35A at 100ºC. The transistor is available in a TO-3P(N) (transistor outline, non-isolated, leaded, plastic package) and shows a maximum junction-to-case thermal resistance, Rth(j-c) of 0.65ºC/W. It has a fall time and a turn-off time of 0.2 and 0.4µs, respectively, with a 40A collector current. The IGBT has a typical reverse recovery time of 0.6µs and its collector-emitter saturation voltage, VCE (sat) is rated at 1.9V.
