Vishay Intertechnology has introduced the N and P-channel power MOSFETs of 0.8mm chipscale package. The 8V N-channel Si8802DB and P-channel Si8805EDB TrenchFET power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. With a 0.357mm profile, they feature low on-resistance at 1.5V with a gate drive of 1.2V. This allows the MOSFETs to work with the low-voltage power rails common in handheld devices, eliminating an extra resistor and voltage source for P-channel load switching, and providing long battery operation between charges in N-channel load switching, says the company.
The N-channel MOSFET offers on-resistance of 54, 60, 68, 86, and 135mΩ at 4.5, 2.5, 1.8, 1.5 and 1.2V, respectively. The P-channel MOSFET features on-resistance of 68, 88, 155 and 290mΩ at 4.5, 2.5, 1.5, and 1.2V, respectively. The on-resistance of the MOSFETs minimises voltage drops across the load switch to prevent unwanted under-voltage lockout.
The MOSFETs are halogen-free and are compliant to RoHS. The P-channel MOSFET offers ESD protection of 1500V.
