A single level cell (SLC) NAND flash memory from Toshiba Electronics Europe has an embedded error correction code (ECC). BENAND can be used in LCD TVs, digital cameras and industrial applications such as robots. Until now, the ECC has been embedded in the host processor and corrected 1bit/512bytes whereas advances in memory process technology require more than 4bit correction/512bytes for NAND flash fabricated with a 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction. BENAND removes ECC from the host processor with minimal protocol changes. By embedding an ECC with an error correction of 4bit/512bytes onto the company's 32nm process SLC NAND flash memory. They are package- and pin configuration-compatible with general SLC NAND flash. Samples of eight memories are available in 4- and 8Gbit now, with production next scheduled for month. The 4Gbit TC58BVG2S0FTA00, TC58BYG2S0FTA00, TC58BVG2S0FBAI4, TC58BYG2S0FBAI4, TC58BVG2S5FBAI4 and TC58BYG2S5FBAI4 are 4Gbit with eight or 16 I/Os and in 48pin TSOPs and 63ball FBGAs. Voltages range are 1.7 to 1.95 and 2.7 to 3.6V. The 8Gbit TH58BVG3S0FTA00 and TH58BYG3S0FTA00 are supplied in a 48pin TSOP. The company has announced plans to include 24nm process NAND flash memory products in the second half of the year.
