Cree has launched two SiC Z-FET MOSFETs, in bare die or chip form, suitable for use in power electronics modules. The CPMF-1200-S080B MOSFET measures 4.08x4.08mm and is rated at 1200V, 20A with a nominal on-resistance, Rds(on) of 80mΩ. The CPMF-1200-S160B MOSFET measures 3.1x3.1mm and is rated at 1200V, 10A with a nominal on-resistance, Rds(on) of 160mΩ. Both MOSFETs operate between -55 and +135°C. Power modules combine MOSFETs and diodes in a single integrated package for high-voltage applications such as three-phase industrial power supplies, telecomms power systems and power inverters for solar and wind energy systems.The SiC modules ensure zero reverse recovery losses, temperature-independent switching, low electromagnetic interference, and significantly high avalanche capability, according to the company. The bare die MOSFETs are said to reduce package-parasitic inductance effects.
