The TO-263-7 PowerMOSFET is part of the NP series of low-voltage power-management devices. It features advanced packaging solutions to reduce leakage current and manage heat dissipation more efficiently. The devices offer on-state resistances Rds_(on) of 1.5 mOhm maximum for a VDSS of 40V and a VGS of 10V, and are well-suited for applications such as automotive, low-voltage DC motor control and uninterruptible power supplies. The TO-263-7 is manufactured in the UMOS-4 process, which is a trench technology and achieves an ultra-fine design rule of 0.25µm. A unique multi-bonding technology doubles the number of bonding wires from two to four wires.