The FDS881XNZ series of high-efficiency N-channel MOSFETs supports up to 8kV ESD (HBM) voltage protection, a figure 90% higher than that of existing devices on the market, claims manufacturer Fairchild Semiconductor. Built using the company's Power Trench process, these low-RDS(ON) devices reduce conduction losses and extend battery life. They also provide rugged and robust avalanche and high-peak current capability to ensure system safety by surviving unexpected voltage spikes. The series offers design engineers a variety of options that they can select depending on their battery application's power-management and load-switching requirements. The FDS8812NZ, with a RDS(ON) of 4mOhm, targets high-end laptops. The FDS8813NZ, with a RDS(ON) of 4.5mOhm, is best suited for all-in-one laptops featuring displays over 15", while the FDS8817NZ (RDS(ON) of 7mOhm) targets general use in low- to mid-tier models. The FDS881x series uses lead-free (Pb-free) terminals and has been characterised for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. The devices are available in a SO8 package. As all Fairchild products, they are designed to meet the requirements of the RoHS directive.