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ROHM has developed SPI-compatible BR25Hxx0 EEPROMs (non-volatile memory) for applications exposed to harsh environmental conditions such as automotive ECUs, where damage is a possibility due to surges and static electricity during startup and vibration and heat during operation. Features include double-cell construction, guaranteed operation at 125°C, high ESD resistance (6kV), gold pad/gold wire connections, and double reset functionality for high reliability. High redundancy circuits and processes combined with thorough screening and debugging ensure 1 million rewrites at 85°C and 300,000 rewrites at 125°C.

The major features of the BR25Hxx0 series include the elimination of memory cell failures due to double-cell construction; a wide operating temperature range: -40° to +125°C; high ESD resistance: 6kV typ. (HBM); gold pad-gold wire connections for greater reliability; built in power supply monitoring circuit with double reset function; high speed write and page write modes; and SPI bus compatibility for easy replacement. Two package types are available: SOP8 (6.2×5.0×1.71mm) and SOP-J8 (6.0x4.9×1.75mm).

The new lineup consists of 12 models in different package types and memory capacities. Mass production is scheduled to start in September.