Samsung Electronics has developed a new 60 nanometer (nm)-class 2 gigabit DDR2 DRAM and will begin mass producing it later this year. Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology. Besides its greater efficiencies, the new 2Gb DDR2 device will provide high storage capacity and accelerate the move toward higher densities in high-end market segments. The new high-performance, high-capacity DRAM is well suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
The 2Gb DDR2 device cuts in half the number of components used in a 1Gb-based 8GB (four-rank) module, which consists of 72 1Gb chips. The new solution consumes approximately 30% less power than a module of the same capacity using 1Gb chips. The lower power level generates less heat, improving reliability and minimising cooling requirements. Samsung can supply the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
With mass production of the 2Gb DDR2 scheduled to begin by year end, Samsung will have its complete DDR2 product line-up in production at the 60nm-class from 512Mb to 2Gb. Samsung's 1Gb and 512Mb are already being produced using 60nm-class process technology.