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4Mbit MRAM Device
operates at SRAM speeds, 35ns read/write
09/02/2008
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Reference: 29327
The EV2A16A MRAM (magnetoresistive random-access memory) is an extended-reliability version of the MR2A16A from Freescale Semiconductor. This 4Mbit device is available with full operational performance across the entire military temperature range (-55 to +125°C), for avionic-, defence- and aerospace-application requirements. The solution is engineered to help protect the data when unexpected events occur - such as a power loss-  without the need of an external battery back-up. The device operates at SRAM speeds with symmetrical 35ns read and write cycles. It comes in a standard 44-lead TSOP type II package, with a standard SRAM interface for seamless system integration.

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May 2012