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International Rectifier has launched a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in uninterruptible power supply (UPS) and solar inverter applications up to 3 kW. The new application-specific devices use IR's new-generation field stop trench technology to reduce conduction and switching losses, and are optimised for switching at 20 kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications. IR's new Trench IGBT devices have lower switching energy coupled with low conduction losses and provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user. Co-packaged with fast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal fast soft recovery diode improves efficiency and reduces EMI.