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Fairchild Semiconductor's new series of 1200V Field Stop Trench IGBTs, the FGA20N120FTD and FGA15N120FTD, provide system designers of induction heating applications with an efficient solution. Using both Field Stop structure and avalanche-rugged Trench gate technology, these IGBTs offer optimal tradeoffs between conduction losses and switching losses, which increase efficiency. The FGA20N120FTD offers low conduction losses and low switching losses, reducing the system's operating temperature. By lowering the cooling needs, system reliability is increased and overall system cost is reduced. Reliability is further ensured by a built-in fast-recovery diode (FRD) that is optimised for Zero Voltage Switching (ZVS) technology. Fairchild's FGA20N120FTD and FGA15N120FTD minimise performance variability and device failures in avalanche-mode operation due to tight parameter distributions and increased avalanche energy. This is achieved with Fairchild's Field Stop structure and proprietary advanced Trench gate cell design. The features of the FGA20N120FTD and FGA15N120FTD include: low switching losses to improve system efficiency; low saturation voltage to reduce conduction losses; built-in fast-recovery diode (FRD) optimised for ZVS topology to help designers reduce component count while ensuring system reliability; tight parameter distribution to reduce performance variation; and good avalanche capability to extend operational life. The FGA20N120FTD and FGA15N120FTD utilise lead-free (Pb-free) terminals and have been characterised for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. Samples are available now.