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Integrated Silicon Solution (ISSI) has introduced a high speed/low power 256Kx32, 8Mb asynchronous SRAM, the IS61WV25632, with access times of 8nS. This new device can give the designer a high speed device that utilises low power technology to minimise power consumption and is available in both 3.3V and 1.8V versions. The IS61WV25632 is targeted for networking, telecommunications, industrial and automotive applications requiring a high density, high speed, fully random access memory. The IS61WV25632ALL operates from 1.65V to 2.2V and the IS61WV25632BLL operates from 2.4V to 3.6V. Both are available in lower power versions, the IS61WV25632ALS and IS61WV25632BLS respectively, with standby currents of 0.8mA.