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ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of 30V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF, and NTMFS4899NF have maximum RDS(on) values of 2, ... More about 30V N-Channel Power MOSFETs

Avago Technologies has introduced the ACPL-H342 and ACPL-K342, which are 2.5A peak-output drive, optically isolated IGBT gate drivers. The drivers feature a built-in Miller clamp, Rail-to-Rail output voltage, UVLO (under-voltage l... More about IGBT gate drivers feature built-in Miller clamp

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Diodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package. Suiting low-power applications, the package with its 0.7mm2 footprint is 30% smaller than SOT723 alternatives and 60% smaller than... More about Miniature SOT963 package enables ultra portable electronic product requirments

Toshiba Electronics Europe has introduced a 60V semi-power MOSFET within its line-up of small S-MOS (signal MOSFET) devices. The SSM3K318T is suitable for battery voltage boosting in white LED (light emitting diode) backlight appl... More about Low ON-Resistance MOSFET

Claimed to be the first MOSFETs capable of drive operation from 0.9V, the ECOMOS MOSFETs from Rohm Semiconductor improve RDS(ON) values particularly when low gate voltages are required. Up to now the lowest drive voltage of MOSFET... More about MOSFETS Reduce Drive Losses

Central Semiconductor has introduced the CMPS5064 Silicon Controlled Rectifier. This 400V, 0.8A SCR device comes in a SOT-23 package for applications with space constraints and requiring a fast-switching, high-voltage device. Key ... More about 400V SCR enables space saving

Diodes has introduced a family of single-gate logic products. Built on an advanced 5V CMOS process, the 74LVC1Gxx series provides users with eight standard logic functions in SOT25 and SOT353 package options, and the device also o... More about Logic products built on advanced 5V CMOS process

NXP Semiconductors has introduced products with SiGe (silicon-germanium) process technology.  Delivering high power gain and enhanced dynamic range, the company's QUBiC4 SiGe:C process is specifically designed to meet the needs of... More about RF/Microwave products based on SiGe:C BiCMOS process technology

Cree has introduced Z-Rec 1700V JBS (junction barrier schottky) diode products. Leveraging silicon carbide's advantages over silicon to eliminate diode switching losses, these diodes are targeted at high-voltage power-conversion a... More about 1700V junction barrier schottky diodes feature high-efficiency switching

Tyco Electronics has introduced the PolyZen ZEN059V130A24LS device. This integrated device helps to provide complete circuit protection for electronics with USB ports and to meet suspend mMode power-consumption requirements for US... More about Polymer-Enhanced Zener Diode

Cree has introduced Z-Rec 1700V JBS (Junction Barrier Schottky) diode products.Leveraging silicon carbide's  advantage over silicon to virtually eliminate diode switching losses, these diodes are targeted at high-voltage power-con... More about Diodes with silicon carbide eliminate switching losses

ON Semiconductor has introduced three new flexible synchronous PWM (pulse width modulation) controller devices - the NCP3020A, NCP3020B and NCP3011. Offering a wide input voltage range, from  4.7 to 28V, these devices enable the f... More about Synchronous PWM controllers provide flexibility

Vishay Intertechnology has introduced a 500V N-channel power MOSFET with improved switching speed and losses compared to previous-generation devices. Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63ns and Qrr o... More about 500V N-channel power MOSFET has improved reverse recovery characteristics

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Cissoid has released Prometheus-II, a fast high temperature power transistor driver reference design suitable for operation from -55 to +225°C. The reference design can drive SiC (silicon carbide), GaN and power devices such as MO... More about High-Temperature Power Transistor Driver

Toshiba Electronics Europe announces a family of power MOSFETs at PCIM that will deliver improved efficiency and faster switching speeds to applications operating with voltages up to 650V and currents to 20A. The TK series of devi... More about High-Performance MOSFETs

• Tailored for Synchronous Rectifi cation• Optimized for fast switching• Up to 20% lower RDS(on)*• Up to 20% increase in power density*• RoHS Compliant• Lead Free... More about Lower RDS(on) Higher Performance

Semtech has introduced the RClamp 2502L device, a 2.5V (Vrwm) protection device in a SO8 package for safeguarding Fast Ethernet and Gigabit Ethernet interfaces from electrostatic discharge, cable discharge, and lightning surge tra... More about 2.5V protection device safeguards high-speed data interfaces

Renesas Technology has introduced the CRD5CM reverse conducting thyristor for use in voltage regulators for two-wheeled vehicles and engines for general-purpose batteries. The device integrates a thyristor and a rectifier diode in... More about Reverse conducting thyristor handles surge current during switching

Diodes has introduced its first transistor products in its miniature PowerDI5 surface-mount package. Designed using the company's fifth generation matrix emitter process, a range of 12 NPN and PNP transistors has initially been re... More about Transistor Products

STMicroelectronics has introduced a family of high-efficiency power rectifiers that will help product manufacturers to achieve energy-efficiency approvals, including 80 PLUS. The STPS50U100C is a rectifier diode and can be used in... More about Power Rectifier Diode

Toshiba Electronics Europe has introduced the TC358762XBG, a deserialiser display bridge chip. The device connects the baseband or application processors used in smartphones, which use MIPI-DSI (Mobile Industry Processor Interface... More about Deserialiser Bridge Chip

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