(19/01/2012)
With a range of current ratings from 10 to 40A, Vishay Intertechnology has released 12 45V devices in three power package options. The low forward voltage drops down to 0.51V typical at 20A, optimising the rectifiers for use in so...
More about Trench MOS Barrier Schottky Rectifiers |
(18/01/2012)
Cree has launched two SiC Z-FET MOSFETs, in bare die or chip form, suitable for use in power electronics modules. The CPMF-1200-S080B MOSFET measures 4.08x4.08mm and is rated at 1200V, 20A with a nominal on-resistance, Rds(on) of ...
More about Two Versions of SiC Z-FET MOSFET |
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(10/01/2012)
Vishay Intertechnology has launched dual asymmetric power MOSFETs for low-voltage DC/DC converter applications. They offer 3x3, 6x3.7, and 6x5mm PowerPAIR form factors. The 30V SiZ300DT targets DC/DC applications handling currents...
More about Power MOSFET for low-voltage DC/DC converters |
(09/01/2012)
NXP Semiconductors has introduced the BC69PA, a medium power transistor in a 2x2mm 3pin, dual, flat, no-lead 2020-3 plastic package, for general-purpose power-sensitive applications in mobiles, tablet PCs, automotive electronics, ...
More about Small Medium Power Transistor |
(09/01/2012)
Silego Technology has announced Green FET 2, dual channel 17mΩ MOSFET load switches for servers, routers, switches, industrial equipment, set-top boxes, game consoles, tablets, notebooks, and smartphones. The SLG59M237 and the SLG...
More about Dual Channel MOSFET Load Switches |
(03/01/2012)
Vishay Intertechnology has introduced the N and P-channel power MOSFETs of 0.8mm chipscale package. The 8V N-channel Si8802DB and P-channel Si8805EDB TrenchFET power MOSFETs can be used for load switching in handheld devices inclu...
More about Micro foot power MOSFETs suitable for load switching |
(03/01/2012)
Toshiba Electronics Europe has expanded its family of compact, monolithically integrated IGBTs with the GT40QR21. This high-speed switching device is suitable for cooking appliances and induction heating applications. The 15.5x20x...
More about Insulated Gate Bipolar Transistor |
(26/12/2011)
Vishay Intertechnology has introduced the first of its Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60V 2N6660JANTX and JANTXV and 90V 2N6661JANTX and JANTXV. For military, space, and avionics applications, ...
More about MOSFETs combine low on-resistance and fast switching speeds |
(30/11/2011)
The spike-free laser, or LED switch, the iC-HG from iC-Haus has six independent channels rated at 0.5A. One single, integrated device in a 5mm wide, QFN package can drive up to six laser diodes or LEDs, or can supply 3x1A if switc...
More about 3A Laser Diode or LED Switch |
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(21/11/2011)
Cree has launched its 1200V SiC Schottky diode product offering includes four surface mount devices in 2, 5, 8, and 10A current ratings and packaged in the surface mount TO-252 D-Pak. According to the company, the surface mount di...
More about Schottky diodes enhance energy efficiency in solar micro inverter designs |
(31/10/2011)
Skyworks has introduced two miniature 0402 varactor diodes for VCO, phase noise, frequency control and voltage tuned filter applications including WLAN, CATV (cable television) low noise block, energy management, wireless infrastr...
More about Two miniature varactor diodes for voltage tuned filter applications |
(20/10/2011)
TE Circuit Protection's RTP200R060SA device is the latest in the series of Reflowable Thermal Protection (RTP) devices that offer a cost-effective alternative to typical thermal fuses. RTP devices help protect against thermal-runa...
More about 0.6mOhm Reflowable Thermal |
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(19/10/2011)
Diodes has expanded its range of DiodeStarÔ products with two 600V DiodeStar rectifiers targeted at Power Factor Correction (PFC) boost diode applications. The DSR6V600P5 and the DSR6U600P5 are housed in Diodes' proprietary powerD...
More about Power Factor Correction |
(18/10/2011)
A dual channel MOSFET driver from Intersil, the ISL89367, can drive two outputs each with 6A of peak drive current. The driver is suitable for switching power supplies, motor drivers and Class-D amplifiers. The driver's voltages r...
More about Dual Channel 6A MOSFET Driver |
(17/10/2011)
Silego Technology has announced a family of GreenFET 2 "GFET2" Dual Channel 17MOhm MOSFET load switches which are rated up to 4.5A per channel. The SLG59M237 and SLG59M247 are capable of switching 1 to 5V power rails. The GFET2 in...
More about Dual-Channel MOSFET Load |
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(06/10/2011)
Vishay Intertechnology has introduced an 8V p-channel TrenchFET (field-effect transistor) power MOSFET. The SiB437EDKT offers an on-resistance rating down to 1.2V. The MOSFET is suitable for load switching in handheld devices such...
More about Power MOSFET offers electrostatic discharge protection of 2000V |
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(05/10/2011)
EASii IC has launched the X-REL semiconductor facility, a spin-off which specialises in designing, manufacturing and commercialising ICs for high-temperature applications. Located in Grenoble, France, X-REL serves many application...
More about EASii IC Creates Facility |
(29/09/2011)
Two non-ferrous TVS arrays from Microsemi are 50W transient voltage suppressor arrays that were specifically designed for MRI (magnetic resonance imaging) machines, as they use non-ferrous metal in the packaging. The USBQNM504xx a...
More about Voltage Suppression TVs Arrays |
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(19/09/2011)
Toshiba Electronics Europe has introduced 30V power MOSFETs which combine high-speed switching, high current ratings and compact size, says the company. The TPC806x-H and TPC822x-H MOSFETs are suitable for digital home appliances,...
More about High Current Power MOSFETs |
(13/09/2011)
TDK-EPC has developed a series of EPCOS EP5 SMT pulse transformers. The pulse transformers are used to couple gate-drive circuits to MOSFETs and IGBTs (insulated-gate bipolar transistors) operating at switching frequencies over 15...
More about Pulse transformers couple gate-drive circuits to MOSFETs and IGBTs |
(09/09/2011)
Central Semiconductor has announced the CTLSH01-30 and CTLSH01-30L low VF (forward voltage drop) Schottky diodes. The diodes have a peak reverse voltage rating of 30V and a maximum forward current rating of 100mA. The CTLSH01-30 h...
More about Schottky Diodes |
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(05/09/2011)
ON Semiconductor has introduced the CAT2300 current mirror with switch controller, that when combined with the company's NTMFS4833NS or NTMFS4854NS SenseFET power MOSFETs, is suitable for current monitoring. This combination enabl...
More about Current Mirror and MOSFETs |
(01/09/2011)
Central Semiconductor has introduced the CMPDM203NH 20V, 3.2A N-Channel and complementary CMPDM202PH 20V, 2.3A P-Channel MOSFETs. These MOSFETs are available in the SOT-23F, have low Rds(on) characteristics of 50 and 88mΩ, respect...
More about MOSFETs suit space constrained power management applications |
(26/08/2011)
ON Semiconductor has introduced a series of small signal PNP and NPN silicon epitaxial switching transistors in accordance with the MIL-PRF-19500 and MIL-STD-750 standards for discrete semiconductors. They are suitable for militar...
More about Signal transistors with qualified MIL-PRF-19500 and MIL-STD-750 standards |
(28/07/2011)
Fairchild Semiconductor has released the PowerTrench MOSFET family of 100 and 150V devices in industrial-type packages such as TO-220, D2PAK, TO247, I2PAK, TO220 full pack and D2PAK-7L packages. The MOSFETs are optimised power swi...
More about MOSFETs employ shielded-gate structure to provide charge balance |