(19/01/2012)
With a range of current ratings from 10 to 40A, Vishay Intertechnology has released 12 45V devices in three power package options. The low forward voltage drops down to 0.51V typical at 20A, optimising the rectifiers for use in so...
More about Trench MOS Barrier Schottky Rectifiers |
(09/01/2012)
NXP Semiconductors has introduced the BC69PA, a medium power transistor in a 2x2mm 3pin, dual, flat, no-lead 2020-3 plastic package, for general-purpose power-sensitive applications in mobiles, tablet PCs, automotive electronics, ...
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(09/01/2012)
Silego Technology has announced Green FET 2, dual channel 17mΩ MOSFET load switches for servers, routers, switches, industrial equipment, set-top boxes, game consoles, tablets, notebooks, and smartphones. The SLG59M237 and the SLG...
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(20/10/2011)
TE Circuit Protection's RTP200R060SA device is the latest in the series of Reflowable Thermal Protection (RTP) devices that offer a cost-effective alternative to typical thermal fuses. RTP devices help protect against thermal-runa...
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(19/10/2011)
Diodes has expanded its range of DiodeStarÔ products with two 600V DiodeStar rectifiers targeted at Power Factor Correction (PFC) boost diode applications. The DSR6V600P5 and the DSR6U600P5 are housed in Diodes' proprietary powerD...
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(05/10/2011)
EASii IC has launched the X-REL semiconductor facility, a spin-off which specialises in designing, manufacturing and commercialising ICs for high-temperature applications. Located in Grenoble, France, X-REL serves many application...
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(29/09/2011)
Two non-ferrous TVS arrays from Microsemi are 50W transient voltage suppressor arrays that were specifically designed for MRI (magnetic resonance imaging) machines, as they use non-ferrous metal in the packaging. The USBQNM504xx a...
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(13/09/2011)
TDK-EPC has developed a series of EPCOS EP5 SMT pulse transformers. The pulse transformers are used to couple gate-drive circuits to MOSFETs and IGBTs (insulated-gate bipolar transistors) operating at switching frequencies over 15...
More about Pulse transformers couple gate-drive circuits to MOSFETs and IGBTs |
(26/08/2011)
ON Semiconductor has introduced a series of small signal PNP and NPN silicon epitaxial switching transistors in accordance with the MIL-PRF-19500 and MIL-STD-750 standards for discrete semiconductors. They are suitable for militar...
More about Signal transistors with qualified MIL-PRF-19500 and MIL-STD-750 standards |
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(07/07/2011)
ON Semiconductor has released a device for integrated ESD protection for use in notebooks, tablets, and external storage devices. The ESD7004 is designed to preserve signal integrity in high-speed applications such as USB 3.0 and ...
More about Module offers low capacitance ESD protection for interfaces |
(04/05/2011)
Freescale Semiconductor has launched two LDMOS (laterally diffused metal oxide semiconductor) RF power transistors that allow wireless basestation amplifiers to cover all channels in an allocated frequency band. According to the c...
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(18/04/2011)
Cal Sensors has launched an LMA (linear multiplexed array) range of lead salt infrared detectors that provide sensitivity in the wavelength region from 1 to 5.5µm. Available in both PbS and PbSe materials, the 256-element LMA offe...
More about Infrared detector arrays feature compensation elements and cooler controller |
(08/04/2011)
Elonics has released low-power, high-definition compatible silicon tuner in a 32-lead 5x5mm QFN, lead-free, RoHS-compliant package. The E4005 low IF compatible silicon tuner consumes less than 140mW whereas the E4002 zero IF tuner...
More about RoHS-compliant silicon tuners suitable for television applications |
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(23/03/2011)
Akros Silicon has announced four new energy-efficient devices for a wide range of high-power, single-input and single-output DC-DC controllers. The AS12xx series is configurable for flyback, forward, boost or buck power topologies...
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(10/03/2011)
SemiSouth Laboratories has announced a reference design and applications note for a gate driver optimised for high speed, hard switching of the company's normally-off SiC vertical JFETs. The design enables fast turn-on and turn-of...
More about Gate driver reference design for isolated bridge topologies |
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(25/02/2011)
Diodes has expanded its portfolio of patented Super Barrier Rectifiers with 12 and 15A rated devices in the compact PowerDI5 package. The devices are characterised by a low forward voltage drop that is claimed to deliver efficienc...
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(24/02/2011)
Renesas Electronics has announced the availability of its low-noise hetero-junction FET (field effect transistor) product, the NE3520S03, featuring low noise characteristics for satellite broadcast reception applications. The FET ...
More about Low noise heterojunction product enhances satellite broadcast reception |
(24/02/2011)
Renesas Electronics has announced the availability of its ultra low-noise heterojunction FET (field effect transistor) product, the NE3520S03, which features the low noise characteristics for satellite broadcast reception applicat...
More about Heterojunction FET features low noise characteristics for 20GHz satellite broadcast reception |
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(24/02/2011)
Analog Devices has introduced the ADP160, ADP161, ADP162 and ADP163 LDOs to address the size, power dissipation and power-supply-rejection requirements of wireless mobile devices. The ultra-low-quiescent-current LDOs extend the ba...
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(10/01/2011)
Cissoid has added Mars, a high temperature, 30V, small-signal P-channel MOSFET to its Planet family of high temperature transistors and switches. The CHT-SPMOS30 is suitable for long term reliable operation from -55 to +225°C. Inp...
More about High Temperature Small-Signal MOSFET |
(12/11/2010)
Mcrosemi unveiled its family of Plastic Wide Area Device (PLAD) surface-mount transient voltage suppressors (TVS) which enable avionics systems to meet new safety standards required for today's carbon composite-skinned aircraft. T...
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(08/10/2010)
Renesas Electronics has announced the development of the RJK0222DNS and RJK0223DNS, two power semiconductor devices with compact packages for use in DC/DC converters that provide power to the MCU/CPU, memory, and other circuit blo...
More about Power semiconductor devices reduce mounting area |
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(08/10/2010)
Diodes has announced the development of DiodeStar, a proprietary process platform for the manufacture of high-voltage rectifiers. The process is characterised by high voltage handling, soft recovery and fast switching. It will sup...
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(29/09/2010)
AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors are available in 1.8mm gullwing and reverse gullwing surface-mount packages from Vishay Intertechnology. The photo detec...
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(29/09/2010)
The BLF888A UHF (ultra high frequency) RF power transistor from NXP Semiconductors is a 600W LDMOS device for broadcast transmitters and industrial applications. For a DVB-T signal over the full UHF band from 470 to 860MHz, the co...
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