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(24/08/2010)
ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of 30V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF, and NTMFS4899NF have maximum RDS(on) values of 2, ...
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(28/07/2010)
Diodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package. Suiting low-power applications, the package with its 0.7mm2 footprint is 30% smaller than SOT723 alternatives and 60% smaller than...
More about Miniature SOT963 package enables ultra portable electronic product requirments |
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(20/07/2010)
Toshiba Electronics Europe has introduced a 60V semi-power MOSFET within its line-up of small S-MOS (signal MOSFET) devices. The SSM3K318T is suitable for battery voltage boosting in white LED (light emitting diode) backlight appl...
More about Low ON-Resistance MOSFET |
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(15/07/2010)
Claimed to be the first MOSFETs capable of drive operation from 0.9V, the ECOMOS MOSFETs from Rohm Semiconductor improve RDS(ON) values particularly when low gate voltages are required. Up to now the lowest drive voltage of MOSFET...
More about MOSFETS Reduce Drive Losses |
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(12/05/2010)
Vishay Intertechnology has introduced a 500V N-channel power MOSFET with improved switching speed and losses compared to previous-generation devices. Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63ns and Qrr o...
More about 500V N-channel power MOSFET has improved reverse recovery characteristics |
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(09/04/2010)
Toshiba Electronics Europe announces a family of power MOSFETs at PCIM that will deliver improved efficiency and faster switching speeds to applications operating with voltages up to 650V and currents to 20A. The TK series of devi...
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(01/04/2010)
• Tailored for Synchronous Rectifi cation• Optimized for fast switching• Up to 20% lower RDS(on)*• Up to 20% increase in power density*• RoHS Compliant• Lead Free...
More about Lower RDS(on) Higher Performance |
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(19/02/2010)
Vishay Intertechnology has released four 600V power MOSFETs that feature the Super Junction FET technology. The SiHP22N60S and SiHF22N60S are available in TO220 and TO220 FULLPAK packages respectively. The SiHG22N60S features the ...
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(03/02/2010)
Following two years of R&D, International Rectifier's DirectFET MOSFETs have been adapted and 10 automotive MOSFETs will be released this year. The first two devices available in the DirectFET2 Power MOSFET series are the AUIRF773...
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(02/02/2010)
NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage power MOSFET devices with low on-state resistance RDS(on) and low-gate charge QG. Based on the company's SuperJunction1 technology, ...
More about Low-voltage power MOSFETs feature SuperJunction1 technology |
(01/02/2010)
NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage Power MOSFET devices that feature a low on-state resistance and a low gate charge. Based on the company's SuperJunction1 technology,...
More about Low-Voltage Power MOSFETs |
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(01/02/2010)
• Tailored for Synchronous Rectifi cation• Optimized for fast switching• Up to 20% lower RDS(on)*• Up to 20% increase in power density*• RoHS Compliant• Lead Free...
More about Lower RDS(on) Higher Performance |
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(01/02/2010)
Optimized for Active ORing and Hot Swap Applications The IRF6718L2 features IR’s latest generation silicon technology in a new large can DirectFET® package delivering extremely low RDS(on) of only 0.5mOhm (typical) at 10V VGS in a...
More about IR’s IRF6718 Large Can DirectFET® MOSFET Delivers Industry’s Lowest RDS(ON)* |
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(29/01/2010)
Vishay Intertechnology has released a 60V n-channel power MOSFET in the tiny SOT-923 package that saves space. The SiM400 measures 1×0.6mm with a maximum height profile of 0.43mm. Its footprint dimensions are 77% smaller than the ...
More about 60V n-channel power MOSFET features low on-resistance |
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(22/01/2010)
Infineon Technologies has expanded its OptiMOS power MOSFET portfolio with 200 and 250V devices for synchronous rectification in 48V systems, DC/DC converters, UPSs and inverters for DC motor drives. The company claims that they h...
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(20/01/2010)
Cissoid has introduced a product in its Planet family of high temperature transistors and switches. Mercury is a high temperature 80V small-signal N-channel MOSFET transistor with an operating temperature range from -55 to +225°C....
More about 80V N-channel MOSFET transistor can switch medium or high resistances |
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(05/01/2010)
A 12V p-channel TrenchFET Gen III power MOSFET from Vishay is claimed to have the industry's lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK SC-75. The footprint area for the SiB455EDK is 1.6x1.6mm, ...
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(30/12/2009)
Renesas Technology Europe has announced 12 10th-generation power-MOSFET products for isolated DC/DC converters used in the power supplies of applications such as servers, communications equipment, and industrial equipment. The pow...
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(24/12/2009)
Vishay Intertechnology has introduced a 20V p-channel power MOSFET with low on-resistance. It is a p-channel device in a 2×2mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the new product built on the ...
More about 20V p-channel power MOSFET causes low on-resistance |
(04/12/2009)
Diodes has introduced a pair of N-channel MOSFETs offering designers of VoIP (Voice over Internet protocol) communication equipment a solution that reduces circuit complexity and cost.The ZXMN15A27K and ZXMN20B28K are suitable for...
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