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	Automotive Power MOSFETs (03/02/2010) Following two years of R&D, International Rectifier's DirectFET MOSFETs have been adapted and 10 automotive MOSFETs will be released this year. The first two devices available in the DirectFET2 Power MOSFET series are the AUIRF773... More
	Low-voltage power MOSFETs feature SuperJunction1 technology (02/02/2010) NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage power MOSFET devices with low on-state resistance RDS(on) and low-gate charge QG. Based on the company's SuperJunction1 technology, ... More
Low-Voltage Power MOSFETs (01/02/2010) NEC Electronics has expanded its NP-series product portfolio with the addition of new low-voltage Power MOSFET devices that feature a low on-state resistance and a low gate charge. Based on the company's SuperJunction1 technology,... More
	IR’s IRF6718 Large Can DirectFET® MOSFET Delivers Industry’s Lowest RDS(ON)* (01/02/2010) Optimized for Active ORing and Hot Swap Applications The IRF6718L2 features IR’s latest generation silicon technology in a new large can DirectFET® package delivering extremely low RDS(on) of only 0.5mOhm (typical) at 10V VGS in a... More
	60V n-channel power MOSFET features low on-resistance (29/01/2010) Vishay Intertechnology has released a 60V n-channel power MOSFET in the tiny SOT-923 package that saves space. The SiM400 measures 1×0.6mm with a maximum height profile of 0.43mm. Its footprint dimensions are 77% smaller than the ... More
	Additions to MOSFET Family (22/01/2010) Infineon Technologies has expanded its OptiMOS power MOSFET portfolio with 200 and 250V devices for synchronous rectification in 48V systems, DC/DC converters, UPSs and inverters for DC motor drives. The company claims that they h... More
80V N-channel MOSFET transistor can switch medium or high resistances (20/01/2010) Cissoid has introduced a product in its Planet family of high temperature transistors and switches. Mercury is a high temperature 80V small-signal N-channel MOSFET transistor with an operating temperature range from -55 to +225°C.... More
	Smallest P-Channel Power MOSFET (05/01/2010) A 12V p-channel TrenchFET Gen III power MOSFET from Vishay is claimed to have the industry's lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK SC-75. The footprint area for the SiB455EDK is 1.6x1.6mm, ... More
	Energy-Efficient MOSFETs (30/12/2009) Renesas Technology Europe has announced 12 10th-generation power-MOSFET products for isolated DC/DC converters used in the power supplies of applications such as servers, communications equipment, and industrial equipment. The pow... More
20V p-channel power MOSFET causes low on-resistance (24/12/2009) Vishay Intertechnology has introduced a 20V p-channel power MOSFET with low on-resistance. It is a p-channel device in a 2×2mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the new product built on the ... More
N-channel MOSFETs reduce circuit complexity (04/12/2009) Diodes has introduced a pair of N-channel MOSFETs offering designers of VoIP (Voice over Internet protocol) communication equipment a solution that reduces circuit complexity and cost.The ZXMN15A27K and ZXMN20B28K are suitable for... More
	Benchmark Power MOSFETs for High Performance Applications (01/12/2009) IR’s latest MOSFETs offer benchmark performance and are tailored for DC/DC conversion, AC/DC synchronous rectifi cation, and Industrial Battery applications such as E-Bike and UPS systems. IR’s latest Trench technology in a wide r... More
	Integrated P-channel MOSFET (01/12/2009) Fairchild has developed an integrated P-channel PowerTrench MOSFET and Schottky diode as a single-package solution to meet critical efficiency and thermal needs in battery-charging and power-multiplexing applications. The FDFMA2P8... More
	High-Density Trench MOSFET (27/11/2009) ON Semiconductor has introduced 24 30V, N-channel Trench MOSFETs in DPAK, SO8FL, µ8FL and SOIC8 packages. The series utilise the company's Trench technology to deliver better on-state resistance and improved switching performance ... More
	Gate-Drive Optocoupler (04/11/2009) NEC Electronics Europe has introduced an IGBT gate-drive optocoupler series that is based on a modified output form, changing from bipolar-MOSFET to MOSFET-MOSFET. According to the company, this has improved switching speed and re... More
	Benchmark Power MOSFETs for High Performance Applications (02/11/2009) IR’s latest MOSFETs offer benchmark performance and are tailored for DC/DC conversion, AC/DC synchronous rectification, and Industrial Battery applications such as E-Bike and UPS systems. IR’s latest Trench technology in a wide ra... More
	Gen III p-channel power MOSFET delivers low on-resistance (15/10/2009) Vishay Intertechnology has introduced a 20V p-channel power MOSFET with low on-resistance in a 1.6×1.6mm footprint area. The new SiB457EDK is built on TrenchFET Gen III p-channel technology, which uses self-aligning process techni... More
Super-Junction MOSFETs provide low input and output capacitances (13/10/2009) Fairchild Semiconductor has introduced SupreMOS, 600V Super-Junction MOSFETs for designers of power supplies, lighting, display and industrial applications. The devices feature low RDS(ON) and total gate charge. The 165mOhm-maximu... More
	Monolithic Power MOSFETs (17/09/2009) Vishay Intertechnology has released monolithic MOSFETs and Schottky SkyFETs, which use the company's TrenchFET Gen III silicon. The Si4628DY delivers the lowest on-resistance ever for a device of its type in an SO-8 package, claim... More
	Dual MOSFET delivers high efficiency and power density (01/09/2009) Fairchild Semiconductor has offered designers a dual MOSFET solution that delivers high efficiency and power density for notebooks, netbooks, servers, telecomms and other DC/DC designs. The FDMC8200 integrates an optimised control... More
	P-channel MOSFET enables high efficiency in small form factor (26/08/2009) Fairchild Semiconductor brings designers of smart phones, cell phones, netbooks, medical and other portable applications a single P-channel MOSFET that enables higher levels of efficiency and a small form factor. The FDZ197PZ offe... More
	Power MOSFET features low on-resistance (24/08/2009) Vishay Intertechnology has expanded its family of Gen III TrenchFET power MOSFETs down to 12V with the release of an N-channel device offering low on-resistance and on-resistance times gate charge.The 12V SiR494DP features a maxim... More
	MOSFETs address LCD backlighting applications (19/08/2009) Diodes has extended its MOSFET offering with the introduction of 15 devices tailored to the needs of LCD TV and monitor backlighting. Provided in TO252 and SO8 packaging, the MOSFETs deliver the high power handling and fast switch... More
	FET Has Low Resistance (13/08/2009) International Rectifier has introduced the IRF6718 DirectFET MOSFET. The 25V device is optimised for DC switch applications such as active O-Ring, hot swap, and E-fuse (electronic fuse). The MOSFET is the company's first device ho... More
	Asymmetric dual TrenchFET power MOSFET features compact packaging (04/08/2009) Vishay Intertechnology has introduced the first device in a series of copackaged, asymmetric power MOSFET pairs that reduces the space required for the high and low-side power MOSFETs in DC/DC converters. The SiZ700DT in the new P... More