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(21/05/2012)
NXP Semiconductors has launched a Schottky rectifier that is available in a flat 1x0.6x0.37mm, plastic, surface mount device, dual flat no-lead 1006D-2 package. The 20V, 0.5A PMEG2005BELD Schottky barrier rectifier delivers a maxi...
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(04/05/2012)
TDK has extended its range of EPCOS thyristor modules for dynamic PFC (power factor correction). The TSM-LC-I thyristor module also allows single-phase PFC of networks with rated voltages from 230 to 525V AC. Depending on the volt...
More about Thyristor module for power factor correction in single- and three-phase industrial networks |
(26/04/2012)
Central Semiconductor announces the CTLT3410-M621 (NPN) and CTLT7410-M621 (PNP) transistors in the space saving, low profile TLM621 surface mount package. These new devices are rated at 1.0A of continuous collector current, 25V co...
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(29/03/2012)
Diodes has introduced the ZXGD3105N8 synchronous MOSFET controller, which enables the replacement of Schottky rectifiers with a MOSFET driven as a suitable diode. The controller can achieve a standby power consumption for set-top ...
More about Synchronous MOSFET controller for AC/DC and DC/DC power supplies |
(12/03/2012)
Texas Instruments has introduced the LM5114 low-side gate driver that drives GaN FETs and MOSFETs used in synchronous rectifiers and power factor converters. The driver is suitable for telecomms, networking and data centre applica...
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(17/02/2012)
Texas Instruments has expanded its MOSFET driver portfolio with three next-generation two-output gate drivers for high-density isolated power supplies. The UCC27210 and UCC27211 are 120V boot, high- and low-side, two-output MOSFET...
More about 4A and 5A two-output MOSFET drivers for telecomms, server and industrial power supplies |
(19/01/2012)
With a range of current ratings from 10 to 40A, Vishay Intertechnology has released 12 45V devices in three power package options. The low forward voltage drops down to 0.51V typical at 20A, optimising the rectifiers for use in so...
More about Trench MOS Barrier Schottky Rectifiers |
(09/01/2012)
NXP Semiconductors has introduced the BC69PA, a medium power transistor in a 2x2mm 3pin, dual, flat, no-lead 2020-3 plastic package, for general-purpose power-sensitive applications in mobiles, tablet PCs, automotive electronics, ...
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(09/01/2012)
Silego Technology has announced Green FET 2, dual channel 17mΩ MOSFET load switches for servers, routers, switches, industrial equipment, set-top boxes, game consoles, tablets, notebooks, and smartphones. The SLG59M237 and the SLG...
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(20/10/2011)
TE Circuit Protection's RTP200R060SA device is the latest in the series of Reflowable Thermal Protection (RTP) devices that offer a cost-effective alternative to typical thermal fuses. RTP devices help protect against thermal-runa...
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(19/10/2011)
Diodes has expanded its range of DiodeStarÔ products with two 600V DiodeStar rectifiers targeted at Power Factor Correction (PFC) boost diode applications. The DSR6V600P5 and the DSR6U600P5 are housed in Diodes' proprietary powerD...
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(05/10/2011)
EASii IC has launched the X-REL semiconductor facility, a spin-off which specialises in designing, manufacturing and commercialising ICs for high-temperature applications. Located in Grenoble, France, X-REL serves many application...
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(29/09/2011)
Two non-ferrous TVS arrays from Microsemi are 50W transient voltage suppressor arrays that were specifically designed for MRI (magnetic resonance imaging) machines, as they use non-ferrous metal in the packaging. The USBQNM504xx a...
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(13/09/2011)
TDK-EPC has developed a series of EPCOS EP5 SMT pulse transformers. The pulse transformers are used to couple gate-drive circuits to MOSFETs and IGBTs (insulated-gate bipolar transistors) operating at switching frequencies over 15...
More about Pulse transformers couple gate-drive circuits to MOSFETs and IGBTs |
(26/08/2011)
ON Semiconductor has introduced a series of small signal PNP and NPN silicon epitaxial switching transistors in accordance with the MIL-PRF-19500 and MIL-STD-750 standards for discrete semiconductors. They are suitable for militar...
More about Signal transistors with qualified MIL-PRF-19500 and MIL-STD-750 standards |
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(07/07/2011)
ON Semiconductor has released a device for integrated ESD protection for use in notebooks, tablets, and external storage devices. The ESD7004 is designed to preserve signal integrity in high-speed applications such as USB 3.0 and ...
More about Module offers low capacitance ESD protection for interfaces |
(04/05/2011)
Freescale Semiconductor has launched two LDMOS (laterally diffused metal oxide semiconductor) RF power transistors that allow wireless basestation amplifiers to cover all channels in an allocated frequency band. According to the c...
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(18/04/2011)
Cal Sensors has launched an LMA (linear multiplexed array) range of lead salt infrared detectors that provide sensitivity in the wavelength region from 1 to 5.5µm. Available in both PbS and PbSe materials, the 256-element LMA offe...
More about Infrared detector arrays feature compensation elements and cooler controller |
(08/04/2011)
Elonics has released low-power, high-definition compatible silicon tuner in a 32-lead 5x5mm QFN, lead-free, RoHS-compliant package. The E4005 low IF compatible silicon tuner consumes less than 140mW whereas the E4002 zero IF tuner...
More about RoHS-compliant silicon tuners suitable for television applications |
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(23/03/2011)
Akros Silicon has announced four new energy-efficient devices for a wide range of high-power, single-input and single-output DC-DC controllers. The AS12xx series is configurable for flyback, forward, boost or buck power topologies...
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(10/03/2011)
SemiSouth Laboratories has announced a reference design and applications note for a gate driver optimised for high speed, hard switching of the company's normally-off SiC vertical JFETs. The design enables fast turn-on and turn-of...
More about Gate driver reference design for isolated bridge topologies |
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(25/02/2011)
Diodes has expanded its portfolio of patented Super Barrier Rectifiers with 12 and 15A rated devices in the compact PowerDI5 package. The devices are characterised by a low forward voltage drop that is claimed to deliver efficienc...
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(24/02/2011)
Renesas Electronics has announced the availability of its low-noise hetero-junction FET (field effect transistor) product, the NE3520S03, featuring low noise characteristics for satellite broadcast reception applications. The FET ...
More about Low noise heterojunction product enhances satellite broadcast reception |
(24/02/2011)
Renesas Electronics has announced the availability of its ultra low-noise heterojunction FET (field effect transistor) product, the NE3520S03, which features the low noise characteristics for satellite broadcast reception applicat...
More about Heterojunction FET features low noise characteristics for 20GHz satellite broadcast reception |
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(24/02/2011)
Analog Devices has introduced the ADP160, ADP161, ADP162 and ADP163 LDOs to address the size, power dissipation and power-supply-rejection requirements of wireless mobile devices. The ultra-low-quiescent-current LDOs extend the ba...
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